Theory of optical spinpolarization of axial divacancy and
nitrogen-vacancy defects in 4H-SiC
Theory of optical spinpolarization of axial divacancy and
nitrogen-vacancy defects in 4H-SiC
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength emission. Nonetheless, the pivotal role of electron-phonon coupling in the spinpolarization loop is still unrevealed. In this work, we theoretically investigate …