High fidelity TiN processing modes for multi-gate Ge-based quantum
devices
High fidelity TiN processing modes for multi-gate Ge-based quantum
devices
Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to realize larger number of gate-defined qubits, multiples of gates with ultimately high resolution and …