Natural width of the superconducting transition in epitaxial TiN films
Natural width of the superconducting transition in epitaxial TiN films
Abstract We investigate the effect of various fluctuation mechanisms on the DC resistance in superconducting (SC) devices based on epitaxial titanium nitride (TiN) films. The samples we studied show a relatively steep resistive transition (RT), with a transition width <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mrow><mml:mi mathvariant="normal">Δ</mml:mi><mml:mi>T</mml:mi><mml:mrow><mml:mo>/</mml:mo></mml:mrow><mml:msub><mml:mi>T</mml:mi><mml:mrow><mml:mi mathvariant="normal">c</mml:mi></mml:mrow></mml:msub><mml:mo>∼</mml:mo><mml:mn>0.002</mml:mn><mml:mo>−</mml:mo><mml:mn>0.025</mml:mn></mml:mrow></mml:math> , depending on the film thickness …