Extended spin relaxation times of optically addressed telecom defects in
silicon carbide
Extended spin relaxation times of optically addressed telecom defects in
silicon carbide
Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a …