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Annealing reduces <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Si</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">N</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math> microwave-frequency dielectric loss in superconducting resonators
The dielectric loss of silicon nitride (${\mathrm{Si}}_{3}{\mathrm{N}}_{4}$) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we measure the cryogenic loss tangent of either as-deposited or high-temperature annealed stoichiometric ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}$ as a function of drive strength and …