Unconventional Unidirectional Magnetoresistance in vdW Heterostructures
Unconventional Unidirectional Magnetoresistance in vdW Heterostructures
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically …