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Properties of Nb <sub>x</sub> Ti<sub>(1−x)</sub>N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits
Abstract Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. This study explores the properties of Nb x Ti …