Programmable Ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Enabled by Oxygen Defect Engineering
Programmable Ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Enabled by Oxygen Defect Engineering
Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report electrically controllable ferroelectricity in a Hf0.5Zr0.5O2-based heterostructure with Sr-doped LaMnO3, a mixed …