Tunable p<i>โ</i>n junction barriers in few-electron bilayer graphene quantum dots
Tunable p<i>โ</i>n junction barriers in few-electron bilayer graphene quantum dots
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer graphene using natural p-n junctions as tunnel barriers. In these devices, demonstrating the electrical tunability of the โฆ