Ionization efficiency for nuclear recoils in silicon from about 50 eV to 3 MeV
Ionization efficiency for nuclear recoils in silicon from about 50 eV to 3 MeV
We present a model for the nuclear recoil ionization efficiency in silicon based on an extension of Lindhard's theory where atomic bond disruption is modeled as a function of the initial ion energy, the interatomic potential, and the average ion-vacancy production energy. A better description of the electronic stopping than …