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Strong gate-tunability of flat bands in bilayer graphene due to moiré encapsulation between hBN monolayers

Strong gate-tunability of flat bands in bilayer graphene due to moiré encapsulation between hBN monolayers

Using advanced tight-binding simulations we uncover a novel mechanism through which hBN encapsulation can induce ultra-flat bands (with bandwidth below 10 meV) in bilayer graphene without the need for interlayer twisting.