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STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si<sub>1−x</sub>B<sub>x</sub>
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses …