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Interplay between exchange-split Dirac and Rashba-type surface states at the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mi>BiTeI</mml:mi></mml:mrow></mml:math> interface

Interplay between exchange-split Dirac and Rashba-type surface states at the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mi>BiTeI</mml:mi></mml:mrow></mml:math> interface

Based on ab initio calculations, we study the electronic structure of the $\mathrm{BiTeI}/\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$ heterostructure interface composed of the antiferromagnetic topological insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of …