Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?
Could the negative capacitance effect be used in field-effect transistors with a ferroelectric gate?
We analyze the electric potential and field, polarization and charge, and differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin layers of dielectric SiO2 and weak ferroelectric HfO2. It appeared possible to achieve a quasi-steady-state negative capacitance (NC) of the HfO2 …