Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably …