Bilinear Magnetoresistance in HgTe Topological Insulator: Opposite Signs at Opposite Surfaces Demonstrated by Gate Control
Bilinear Magnetoresistance in HgTe Topological Insulator: Opposite Signs at Opposite Surfaces Demonstrated by Gate Control
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit torques to novel magnetoresistance phenomena. In particular, a puzzling magnetoresistance has been evidenced as bilinear in electric and …