Anderson localization crossover in two-dimensional Si systems: The past and the present
Anderson localization crossover in two-dimensional Si systems: The past and the present
Using Ioffe-Regel-Mott (IRM) criterion for strong localization crossover in disordered doped 2D electron systems, we theoretically study the relationships among the three key experimentally determined localization quantities: critical density ($n_\mathrm{c}$), critical resistance ($\rho_\mathrm{c}$), and sample quality defined by the effective impurity density (as experimentally diagnosed by the sample mobility, $\mu_\mathrm{m}$, …