Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation
Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples were produced from p-type (100) Si wafers …