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High-precision real-space simulation of electrostatically confined few-electron states

High-precision real-space simulation of electrostatically confined few-electron states

In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the …