Visualizing Critical Correlations Near the Metal–Insulator Transition in Ga1−xMnxAs
Visualizing Critical Correlations Near the Metal–Insulator Transition in Ga1−xMnxAs
Electronic states in disordered conductors on the verge of localization are predicted to exhibit critical spatial characteristics indicative of the proximity to a metal- insulator phase transition. In this chapter, we describe how the scanning tunneling microscopy (STM) measurements on doped semiconductors near the metal-insulator transition can be used to …