Spin Interference In Silicon One-Dimensional Rings
Spin Interference In Silicon One-Dimensional Rings
We present the first findings of the spin transistor effect in the Rashba gate‐controlled ring embedded in the p‐type self‐assembled silicon quantum well that is prepared on the n‐type Si (100) surface. Firstly, the amplitude and phase sensitivity of the "0.7⋅(2 e2/h)" feature of the hole quantum conductance staircase revealed …