Substrate influence on transition metal dichalcogenide monolayer exciton absorption linewidth broadening
Substrate influence on transition metal dichalcogenide monolayer exciton absorption linewidth broadening
The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ …