Electric field induced edge-state oscillations in InAs/GaSb quantum wells
Electric field induced edge-state oscillations in InAs/GaSb quantum wells
Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantum spin Hall insulator (QSHI) behavior. The experimental characterization of the QSHI phase in these systems has relied on the presence of quantized edge transport near charge neutrality. However, experimental data showing the presence of edge conductance in the \emph{trivial} …