Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Hydride vapor phase epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cells for space and terrestrial applications. However, recent demonstrations of ultrafast growth rates (∼500 μm/h) via uncracked hydrides are not well described by present models …