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Narrow-gap semiconducting behavior in antiferromagnetic <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">Eu</mml:mi><mml:mn>11</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">InSb</mml:mi><mml:mn>9</mml:mn></mml:msub></mml:math>
Here we investigate the thermodynamic and electronic properties of ${\mathrm{Eu}}_{11}\mathrm{In}{\mathrm{Sb}}_{9}$ single crystals. Electrical transport data show that ${\mathrm{Eu}}_{11}\mathrm{In}{\mathrm{Sb}}_{9}$ has a semiconducting ground state with a relatively narrow band gap of 320 meV. Magnetic susceptibility data reveal antiferromagnetic order at low temperatures, whereas ferromagnetic interactions dominate at high temperature. Specific heat, …