Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements
Abstract There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal …