High mobility SiMOSFETs fabricated in a full 300 mm CMOS process
High mobility SiMOSFETs fabricated in a full 300 mm CMOS process
Abstract The quality of the semiconductor–barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full …