Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties
Effect of heteroepitaxial growth on LT-GaAs: ultrafast optical properties
Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si can be very different from those grown on semi-insulating GaAs substrates (reference). In this study, we investigate optical properties of an epitaxial …