Im{<i>χ</i>(3)} spectra of 110-cut GaAs, GaP, and Si near the two-photon absorption band edge
Im{<i>χ</i>(3)} spectra of 110-cut GaAs, GaP, and Si near the two-photon absorption band edge
Spectra of the degenerate two-photon absorption coefficient β(ω), anisotropy parameter σ(ω), and dichroism parameter δ(ω)=[σ(ω)+2η(ω)]/2 of crystalline 110-cut GaAs, GaP, and Si, at 300 K were measured using femtosecond pump–probe modulation spectroscopy over an excitation range in the vicinity of each material’s half-bandgap Eg/2 (overall 0.62&lt;ℏω&lt;1.91 eV or 2000&gt;λ&gt;650 nm). …