Twisted monolayer and bilayer graphene for vertical tunneling transistors
Twisted monolayer and bilayer graphene for vertical tunneling transistors
We prepare twist-controlled resonant tunneling transistors consisting of monolayer and Bernal bilayer graphene electrodes separated by a thin layer of hexagonal boron nitride. The resonant conditions are achieved by closely aligning the crystallographic orientation of graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under …