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Low Temperature Relaxation of Donor Bound Electron Spins in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mmultiscripts><mml:mrow><mml:mi>Si</mml:mi></mml:mrow><mml:mprescripts /><mml:none /><mml:mrow><mml:mn>28</mml:mn></mml:mrow></mml:mmultiscripts><mml:mo>:</mml:mo><mml:mi mathvariant="normal">P</mml:mi></mml:mrow></mml:math>
We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped $^{28}\mathrm{Si}:\mathrm{P}$. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The $^{28}\mathrm{Si}:\mathrm{P}$ spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a …