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Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac Semimetal<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>As</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
Analyzing changes in resistivity is one component of condensed-matter physics research that has applications in the electronics industry. Now, researchers experimentally show that the resistivity of a Cd${}_{3}$As${}_{2}$ crystal can be modulated by the geometry of the material's Fermi surface.