Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore …