Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits
Epitaxially grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring …