Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping
Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping
Abstract Si‐based photodetectors satisfy the criteria of being low‐cost and environmentally friendly, and can enable the development of on‐chip complementary metal‐oxide‐semiconductor (CMOS)‐compatible photonic systems. However, extending their room‐temperature photoresponse into the mid‐wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive …