Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping
Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)compatible photonic systems.However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si.Here, we report on a comprehensive study of a room-temperature MWIR …