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Modulation of Dirac electrons in epitaxial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> ultrathin films on van der Waals ferromagnet <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Cr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</…
We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ was epitaxially grown on a van der Waals ferromagnet ${\mathrm{Cr}}_{2}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$ (CST) by angle-resolved photoemission spectroscopy. We observed a gapless Dirac-cone surface state in six quintuple-layer (6QL) ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ on CST, whereas the Dirac cone exhibits …