Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass, and monolayer-thin body. In this work, we examine the device physics of …