Semi-adsorption-controlled growth window for half-Heusler FeVSb epitaxial films
Semi-adsorption-controlled growth window for half-Heusler FeVSb epitaxial films
The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a \textit{semi} adsorption-controlled growth window for semiconducting half Heusler FeVSb films, grown by molecular beam epitaxy (MBE). …