Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing
Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing
Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it …