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Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
We propose and demonstrate a relaxed-SiGe/strained-Si enhancement-mode gate stack for quantum dots. A mobility of 1.6 × 105 cm2/Vs at 5.8 × 1011/cm2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade measured in a double-top-gated lateral quantum dot nanostructure …