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High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces

We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron system on a hydrogen-passivated Si(111) surface. This vacuum cavity preserves the ambient sensitive surface and is created via room temperature contact bonding of two Si …