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rf Quantum Capacitance of the Topological Insulator <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Se</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> in the Bulk Depleted Regime for Field-Effect Transistors
The massless surface states of topological insulators (TIs) are of great interest for tomorrow's electronics. However, excessive defect doping of bulk bands significantly hinders the studies that would enable applications of TIs, in particular as efficient channel materials for high-frequency transistors. The authors take an important step toward resolving this …