Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene
Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg). Unlike the conventional hetero-junction TFETs, TE-TFET uses spatially varying layer thickness to form a hetero-junction. This offers advantages by avoiding …