Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads
We report on the fabrication and characterization of quantum-dot devices in a Schottky-gated silicon/silicon–germanium modulation-doped two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this …