Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much …