Simulation of Phosphorus Implantation into Silicon with a Single Parameter Electronic Stopping Power Model
Simulation of Phosphorus Implantation into Silicon with a Single Parameter Electronic Stopping Power Model
We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge Z1*, and a local charge density dependent electronic stopping power for a proton. There is only a single …