Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study
Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a three-dimensional Poisson equation. The armchair edge GNR channel shares similarities with a zigzag CNT, but it has a different …