A low-disorder metal-oxide-silicon double quantum dot
A low-disorder metal-oxide-silicon double quantum dot
One of the biggest challenges impeding the progress of metal-oxide-silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO2 interface which interferes with controllably confining single and few electrons. In this work, we have engineered a low-disorder MOS quantum double-dot device with critical electron densities, i.e., the …