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Chalcogen-Assisted Enhanced Atomic Orbital Interaction at TMD–Metal Interface and Sulfur Passivation for Overall Performance Boost of 2-D TMD FETs
Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly limited by Schottky barrier at the contacts which must be reduced to achieve highly efficient contacts for carrier injection into the …